NTE367 Datasheet | NTE Electronics

Description : The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large- signal amplifier applications in industrial and mercial FM equipment operating to 512MHz. Features : D Specified 12.5V, 470MHz Characteristics: Output Power: 45W Minimum Gain: 4.8d B Efficiency: 55% D Characterized with Series Equivalent Large- Signal Impedance Parameters D Built- In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and 50% Overdrive Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 16V Collector- Base Voltage, VCBO - - - - - - - - - - - 36V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Continuous Collector Current, IC - - - - - - - - - - . . . . 9A Total Device Dissipation (TC = +25°C), PD - - - - - - - - . . . 117W Derate Above 25°C - - - - - - - - - - . . . 670m W/°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +150°C Thermal Resistance, Junction to Case, RΘJC -...