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NTE367 - Silicon NPN Transistor

Description

The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large

signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

Features

  • D Specified 12.5V, 470MHz Characteristics: Output Power: 45W Minimum Gain: 4.8dB Efficiency: 55% D Characterized with Series Equivalent Large.
  • Signal Impedance Parameters D Built.
  • In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and 50% Overdrive Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • .

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Datasheet Details

Part number NTE367
Manufacturer NTE
File Size 22.11 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE367 Datasheet
Additional preview pages of the NTE367 datasheet.

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Full PDF Text Transcription

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NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5V, 470MHz Characteristics: Output Power: 45W Minimum Gain: 4.8dB Efficiency: 55% D Characterized with Series Equivalent Large–Signal Impedance Parameters D Built–In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and 50% Overdrive Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |