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NTE470 - Silicon NPN Transistor

Description

The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high

power linear amplifier from 2.0 to 30MHz.

Features

  • D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD =.
  • 30dB Min D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 20V Collector.
  • Base Voltage, VCBO.

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Datasheet Details

Part number NTE470
Manufacturer NTE
File Size 24.07 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE470 Datasheet
Additional preview pages of the NTE470 datasheet.

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Full PDF Text Transcription

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NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD = –30dB Min D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter–Base Voltage, VEBO . . . . .
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