NTE470 Datasheet | NTE Electronics

Description : The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high- power linear amplifier from 2.0 to 30MHz. Features : D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10d B Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD = - 30d B Min D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 20V Collector- Base Voltage, VCBO - - - - - - - - - - - 45V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 3V Continuous Collector Current, IC - - - - - - - - - - . . . 20A Withstand Current (10s) - - - - - - - - - - - - . 30A Total Device Dissipation (TC = +25°C), PD - - - - - - - - . . . 290W Derate Above 25°C - - - - - - -...