NTE471 Datasheet | NTE Electronics

Description : The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB munications. This device utilizes state- of- the- art diffused emitter ballasting for improved ruggedness and reliability. Features : D Better than 15d B Gain at 30MHz and 100W (CW/PEP) D Diffused Emitter Ballasting D Withstands Infinite Mismatch at Operating Conditions D Low Inductance Stripline Package D Frequency = 30MHz D Power Out = 100 Watts D Voltage = 28 Volts D Power Gain = 15d B Absolute Maximum Ratings: (TC = +25°C unless otherweise specified) Collector- Base Voltage, VCBO - - - - - - - - - - - 65V Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 36V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Maximum Collector Current, IC - - - - - - - - - - - 20A Total Device Dissipation (TC = +25°C), Ptot - - - - - - - - . . 270W Maximum Junction Temperatures, TJ - - - - - - - - - . +200°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +150°C Thermal Resistance, Junction- to- Case, Rth...