NTE472 Datasheet | NTE Electronics

Description : The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre- driver stages in VHF and UHF equipment. Features : D Specified 12.5 Volt, 175MHz Characteristics: Output Power = 1.75 Watts Minimum Gain = 11.5d B Efficiency = 50% D Characterized through 225MHz Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . 16V Collector- Base Voltage, VCBO - - - - - - - - - - - 36V Emitter- Base Voltage, VEBO - - - - - - - - - - - 3.5V Continuous Collector Current, IC - - - - - - - - - - . 0.33A Total Device Dissipation (TC = +75°C , Note 1), PD - - - - - - - . 3.5W Derate Above 75°C - - - - - - - - - - . . . 28m W/°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +200°C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as a class B or C RF amplifier. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter OFF Characteristics Collector- Emitter Breakdown Voltage V(BR)CEO IC = 25m A, IB = 0 V(BR)CES IC = 25m A, VBE = 0 Emitter- Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IC = 0.5m A, IC = 0 ICEO VCE = 10V, IB = 0 16 36...