NTE475
NTE475 is Silicon NPN Transistor manufactured by NTE Electronics.
Description
: The NTE475 is an NPN silicon annular RF power transistor, optimized for large- scale power- amplifier and driver applications to 300MHz. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector- Emitter Voltage, VCEO
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- - . . . . 18V Collector- Base Voltage,VCB
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- . . 36V Emitter- Base Voltage, VEB
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- . . . . 4V Collector Current, IC
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- - . . . 1.5A Power Dissipation (TC = +25°C), PD
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- . . . 11.6W Derate Above 25°C
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- - . 66.3m W/°C Operating Junction Temperature Range, TJ
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- 65° to +200°C Storage Temperature Range, Tstg
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