NTE476 Datasheet | NTE Electronics

Description : The NTE476 is a silicon epitaxial NPN- planar transistor which employs a multi- emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling capability, high power gain, low base resistance and low output capacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency multiplier circuits. Features : D Designed for VHF mobile and marine transmitters D High efficiency at maximum stability D Improved metallization to achieve extreme ruggedness Absolute Maximum Ratings: (TA = +25°C except where specified) Collector- Base Voltage, VCBO - - - - - - - - - - - 36V Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 18V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Continuous Collector Current, ICmax - - - - - - - - - - . 3A Total Dissipation at 25°C Stud, PD - - - - - - - - - - 23.2W Thermal Resistance, Junction- to- Stud, Rth JC - - - - - - - . . 7.54°C/W Junction Temperature Range, TJ - - - - - - - - . . . . - 65° to 200°C Storage Temperature Range, Tstg -...