NTE477 Datasheet | NTE Electronics

Description : The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features : D High power gain: Gpe ≥ 8.2d B @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold metallization for high reliability, and good performances D Low thermal resistance ceramic package with flange D Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V, PO = 40W, f = 175MHz, TC = 25°C Applications: 30 to 35 watts output power amplifiers in VHF band mobile radio applications. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector- Base Voltage, VCBO - - - - - - - - - - - 35V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Collector- Emitter Voltage (RBE = ∞), VCEO - - - - - - - - . . . 17V Collector Current, IC - - - - - - - - - - - - . . . . 10A Collector Dissipation, PC TA = +25°C - - - - - - - - - - - - . . . . 4.5W TC = +25°C - - - - - - - - - - - - . . . . 75W Junction Temperature, Tj - - - - -...