NTE478 Datasheet | NTE Electronics

Description : The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF munications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions, and is internally input matched to optimize power gain and efficiency over the band. Features : D Designed for VHF Military and mercial Equipment D 100W Min with Greater than 6.0d B Gain D Withstands Infinite VSWR under Operating Conditions D Low Intermodulation Distortion (- 32d B) D Diffused Emitter Resistors Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector- Base Voltage, VCBO - - - - - - - - - - - 36V Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 18V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Maximum Collector Current, IC - - - - - - - - - - - 20A Total Device Dissipation (At +25°C), Ptot - - - - - - - - - 270W Operating Junction Temperature, TJ - - - - - - - - - . . +200°C Storage Temperature Range, Tstg - - - - - - - - ....