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BFU660F

Manufacturer: NXP Semiconductors

BFU660F datasheet by NXP Semiconductors.

BFU660F datasheet preview

BFU660F Datasheet Details

Part number BFU660F
Datasheet BFU660F_NXPSemiconductors.pdf
File Size 122.95 KB
Manufacturer NXP Semiconductors
Description NPN wideband silicon RF transistor
BFU660F page 2 BFU660F page 3

BFU660F Overview

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

BFU660F Key Features

  • Low noise high linearity RF transistor
  • High output third-order intercept point 27 dBm at 1.8 GHz
  • 40 GHz fT silicon technology
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BFU660F Distributor

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