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BFU660F - NPN wideband silicon RF transistor

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NXP Semiconductors

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BFU660F NPN wideband silicon RF transistor by NXP Semiconductors - Datasheet Preview — Datasheet preview – BFU660F

Datasheet Details

Part number	BFU660F
Manufacturer	NXP Semiconductors
File Size	122.95 KB
Description	NPN wideband silicon RF transistor
Datasheet	BFU660F Datasheet
Additional preview pages of the BFU660F datasheet.

Product details

Description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Features

Low noise high linearity RF transistor.
High output third-order intercept point 27 dBm at 1.8 GHz.
40 GHz fT silicon technology 1.3.

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Published: Jan 15, 2012 |