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BFU660F - NPN wideband silicon RF transistor

General Description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Key Features

  • Low noise high linearity RF transistor.
  • High output third-order intercept point 27 dBm at 1.8 GHz.
  • 40 GHz fT silicon technology 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits „ Low noise high linearity RF transistor „ High output third-order intercept point 27 dBm at 1.8 GHz „ 40 GHz fT silicon technology 1.