BFU660F Description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
BFU660F Key Features
- Low noise high linearity RF transistor
- High output third-order intercept point 27 dBm at 1.8 GHz
- 40 GHz fT silicon technology