BFU660F Datasheet | NXP Semiconductors

NPN wideband silicon RF transistor Rev. 1 - 11 January 2011 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits - Low noise high linearity RF transistor - High output third-order intercept point 27 dBm at 1.8 GHz - 40 GHz fT silicon technology 1.3 Applications - Analog/digital cordless...