BFU710F Description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
BFU710F Key Features
- Low noise high gain microwave transistor
- Noise figure (NF) = 1.45 dB at 12 GHz
- High maximum power gain 14 dB at 12 GHz
- 110 GHz fT silicon germanium technology