Datasheet4U Logo Datasheet4U.com

BFU710F Datasheet NPN Wideband Silicon Germanium Rf Transistor

Manufacturer: NXP Semiconductors

Overview: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile CAUTION 1.

General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Key Features

  • Low noise high gain microwave transistor.
  • Noise figure (NF) = 1.45 dB at 12 GHz.
  • High maximum power gain 14 dB at 12 GHz.
  • 110 GHz fT silicon germanium technology 1.3.

BFU710F Distributor