BFU710F Datasheet | NXP Semiconductors

NPN wideband silicon germanium RF transistor Rev. 1 - 20 April 2011 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits - Low noise high gain microwave transistor - Noise figure (NF) = 1.45 dB at 12 GHz - High maximum power gain 14 dB at 12 GHz - 110 GHz fT silicon germanium...