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BFU760F Datasheet Wideband Silicon Germanium Rf Transistor

Manufacturer: NXP Semiconductors

Overview: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.

General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Key Features

  • Low noise high linearity RF transistor.
  • High maximum output third-order intercept point 32 dBm at 1.8 GHz.
  • 110 GHz fT silicon germanium technology 1.3.

BFU760F Distributor