BFU760F Description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
BFU760F Key Features
- Low noise high linearity RF transistor
- High maximum output third-order intercept point 32 dBm at 1.8 GHz
- 110 GHz fT silicon germanium technology