BUK6218-40C Datasheet | NXP Semiconductors

N-channel Trench MOS intermediate level FET Rev. 1 - 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for standard and logic level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V Automotive systems - Electric and electro-hydraulic power steering - Motors, lamps and solenoids - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 see Figure 2 Min Typ Max Unit 40 42 60 V A W Static characteristics RDSon VGS = 10 V; ID = 10 A; Tmb = 25 °C; see Figure 11 13.5 16 mΩ NXP Semiconductors N-channel Trench MOS intermediate level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 25 m J Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 42 A; Vsup ≤ 40 V; drain-source VGS = 10 V; Tj(init) = 25 °C; avalanche energy unclamped gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 13; see Figure 14 Dynamic characteristics QGD 7.7 n C 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb Simplified...