BUK7C06-40AITE Datasheet | NXP Semiconductors

description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Trench MOS technology, featuring very low on-state resistance and including Trench PLUS current sensing, and diodes for Electro Static Discharge (ESD) and overtemperature protection. .. 1.2 Features s Q101 pliant s ESD protection s Integrated temperature sensor s Integrated current sensor 1.3 Applications s Variable valve timing for engines s Automotive and power switching s Electrical power assisted steering s Fan control 1.4 Quick reference data s VDS ≤ 40 V s ID ≤ 155 A s RDSon = 4.7 mΩ (typ) s VF = 658 m V (typ) s SF = - 1.54 m V/K (typ) s ID/Isense = 615 (typ) 2. Pinning information Table 1: Pin 1 2 3 4 5 6 7 mb Pinning Description gate (G) Isense anode (A) drain (D) cathode (K) kelvin source source (S) mounting base; connected to drain (D) 4 123 567 G mb D A Simplified outline Symbol SOT427 (D2PAK) Isense S K Kelvin source sym110 Philips Semiconductors N-channel Trench MOS standard level FET 3. Ordering information Table 2: Ordering information Package Name BUK7C06-40AITE D2PAK Description Plastic single-ended surface mounted package; 7 leads (one lead cropped) Version SOT427 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). w w w . D Symbol a t a S h e Parameter et4U. VDS VDGR VGS ID drain-source voltage drain-gate voltage (DC) gate-source voltage drain current Conditions RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 [1] [2] [2] Min - 55 - 55 Max 40 40 ±20 155 75 75 620 272 10 50 ±100 +175 +175 155 75 620 1.46 Unit V V V A A A A W m A m A V °C °C A A A J IDM Ptot IGS(CL) Visol(FET-TSD) Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation gate-source clamping current FET to temperature sense diode isolation voltage storage temperature junction temperature reverse drain current peak reverse drain...