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BUK7C06-40AITE
N-channel TrenchMOS standard level FET
Rev. 04 — 23 June 2005 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and overtemperature protection.
www.DataSheet4U.com 1.2 Features
s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor
1.3 Applications
s Variable valve timing for engines s Automotive and power switching s Electrical power assisted steering s Fan control
1.4 Quick reference data
s VDS ≤ 40 V s ID ≤ 155 A s RDSon = 4.7 mΩ (typ) s VF = 658 mV (typ) s SF = −1.
BUK7C06-40AITE Datasheet
