BUK7C10-75AITE Datasheet | NXP Semiconductors

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. The devices include Trench PLUS current sensing and diodes for Electro Static Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Allows responsive temperature monitoring due to integrated temperature sensor - Electrostatically robust due to integrated protection diodes - Low conduction losses due to low on-state resistance - Q101 pliant - Reduced ponent count due to integrated current sensor 1.3 Applications - Automotive and general purpose power switching - Fan control - Electrical Power Assisted Steering (EPAS) - Variable Valve Timing for engines 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 2; [1] see Figure 3 VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 Tj > -55 °C; Tj < 175 °C; VGS > 10 V IF = 250 µA; Tj > -55 °C; Tj < 175 °C IF = 250 µA; Tj = 25 °C Min Typ Max 75 114 Unit V A Static characteristics RDSon ID/Isense SF(TSD) VF(TSD) drain-source on-state resistance ratio of drain current to sense current temperature sense diode temperature coefficient temperature sense diode forward voltage [1] 450 -1.4 648 8.8 500 -1.54 658 10 550 -1.68 668 mΩ m V/K m V Current is limited by power dissipation chip rating. NXP Semiconductors N-channel Trench PLUS standard level FET .. 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 mb Pinning information Symbol G ISENSE A D K KS S D Description gate sense current anode drain cathode Kelvin source source mounting base; connected to drain g Simplified outline mb Graphic symbol d a 4 123 567 SOT427 (D2PAK) MBL362 Isense s k Kelvin source 3. Ordering information Table 3....