BUK7C08-75AITE Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™ technology, featuring very low on-state resistance. Also includes Trench PLUS current sensing, and diodes for ESD and temperature protection. Product availability: .. BUK7C10-75AITE in SOT427 (D2-PAK). 1.2 Features s Q101 pliant s ESD protection s Integrated temperature sensor s Integrated current sensor. 1.3 Applications s Variable Valve Timing for engines s Automotive and power switching s Electrical Power Assisted Steering s Fan control. 1.4 Quick reference data s VDS ≤ 75 V s ID ≤ 114 A s RDSon = 8.8 mΩ (typ) s VF = 658 m V (typ) s SF = - 1.54 m V/K (typ) s ID/Isense = 500 (typ). 2. Pinning information Table 1: Pin 1 2 3 4 mb Pinning - SOT427 (D2-PAK) simplified outline and symbol Description gate (g) Isense anode (a) drain (d) mounting base; connected to drain (d) Pin 5 6 7 Description cathode (k) d a Simplified outline Symbol Kelvin source source (s) 1 2 3 4 5 6 7 mb g Front view MBK128 MBL362 Isense s k Kelvin source SOT427 (D2-PAK) Philips Semiconductors BUK7C10-75AITE Trench PLUS standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 continuous tp = 5 ms; δ = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM EDS(AL)S storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 75 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C [1] [2] [1] [2] [2] Conditions Min - 55 - 55 - Max 75 75...