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PMG370XN - N-channel mTrenchMOS extremely low level FET

Datasheet Summary

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features

  • s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage. 1.3.

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Datasheet Details

Part number PMG370XN
Manufacturer NXP Semiconductors
File Size 114.14 KB
Description N-channel mTrenchMOS extremely low level FET
Datasheet download datasheet PMG370XN Datasheet
Additional preview pages of the PMG370XN datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com PMG370XN N-channel µTrenchMOS™ extremely low level FET MBD128 Rev. 01 — 13 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 0.69 W s ID ≤ 0.96 A s RDSon ≤ 440 mΩ. 2.
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