NXP Semiconductors A5M36SG239
The A5M36SG239 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems. The module includes an autobias feature that automatically sets the transistor bias upon power up and an integrated sensor that monitors the temperature.| Part No. | A5M36SG239 |
|---|---|
| Datasheet | A5M36SG239 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast Power Amplifier Module |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier● Advanced high performance in-package Doherty
● Fully matched (50 ohm input/output, DC blocked)
● Designed for low complexity digital linearization systems
● Reduced memory effects for improved linearized error vector magnitude
● Autobias on power up
● Temperature sensing
● Digital interface (I2C or SPI)
● Embedded registers and DACs for setting bias conditions
● Tx enable control pin for TDD operation 3 Typical LTE performance Table 1. Typical LTE Performance Carrier Center Frequency Gain (dB) ACPR (dBc) PAE (%) Typical LTE Performance — 3400–3800 MHz (Pout = 8 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.)[1] 3410 MHz 31.4 –27.4 44.1 3500 MHz 31.4 –26.6 44.4 3600 MHz 31.7 –26.2 46.3 3700 MHz 31.6 –26.9 48.0 3790 MHz 31.0 –27.2 47.3 [1] All data measured with device soldered to NXP reference circuit.
