A5M36SG239 Overview
The A5M36SG239 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems.
A5M36SG239 Key Features
- 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
- Advanced high performance in-package Doherty
- Fully matched (50 ohm input/output, DC blocked)
- Designed for low plexity digital linearization systems
- Reduced memory effects for improved linearized error vector magnitude
- Autobias on power up
- Temperature sensing
- Digital interface (I2C or SPI)
- Embedded registers and DACs for setting bias conditions
- Tx enable control pin for TDD operation
A5M36SG239 Applications
- 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier