• Part: A5M36TG240
  • Description: Airfast Power Amplifier Module
  • Manufacturer: NXP Semiconductors
  • Size: 713.42 KB
Download A5M36TG240 Datasheet PDF
NXP Semiconductors
A5M36TG240
description The A5M36TG240 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and Ga N power amplifiers are designed for TDD LTE and 5G systems. 2 Features and benefits - 2-stage module solution that includes an LDMOS integrated circuit as a driver and a Ga N final stage amplifier - Advanced high performance in-package Doherty - Fully matched (50 ohm input/output, DC blocked) - Designed for low plexity digital linearization systems - Reduced memory effects for improved linearized error vector magnitude 3 Typical performance Table 1. 3400- 3800 MHz - Typical LTE performance Ponou Ct =CD9 FW.[1A] vg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, input signal PAR = 8 d B @ 0.01% probability Carrier center Gain ACPR PAE frequency (d B) (d...