NXP Semiconductors A5M36TG240
The A5M36TG240 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems.| Part No. | A5M36TG240 |
|---|---|
| Datasheet | A5M36TG240 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast Power Amplifier Module |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier● Advanced high performance in-package Doherty
● Fully matched (50 ohm input/output, DC blocked)
● Designed for low complexity digital linearization systems
● Reduced memory effects for improved linearized error vector magnitude 3 Typical performance Table 1. 3400–3800 MHz — Typical LTE performance PonouCt =CD9 FW.[1A] vg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, input signal PAR = 8 dB @ 0.01% probability Carrier center Gain ACPR PAE frequency (dB) (dBc) (%) 3410 MHz 31.4 –26.4 45.2 3500 MHz 31.7 –27.0 49.4 3600 MHz 31.8 –27.8 51.7 3700 MHz 31.9 –29.4 51.6 3790 MHz 32.0 –30.9 50.0 [1] All data measured with device soldered to NXP reference circuit. NXP Semiconductors 4 Pinning information 4.1 Pinning A5M36TG240 Airfast Power Amplifier Module Figure 1. Pin configuration A5M36TG240 Product data sheet All information provided in this document is subject to legal disclaimers.
