BAV10 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 16 Philips Semiconductors Product specification High-speed diode Features - Hermetically sealed leaded glass SOD27 (DO-35) package - High switching speed: max. 6 ns - General application - Continuous reverse voltage: max. 60 V - Repetitive peak reverse voltage: max. 60 V - Repetitive peak forward current: max. 600 mA. The diode is type branded. handbook, halfpage k DESCRIPTION The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 APPLICATIONS -...