NXP Semiconductors BF824
This document contains data from the objective specification for product development. This document contains data from the preliminary specification.| Part No. | BF824 |
|---|---|
| Datasheet | BF824 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP medium frequency transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 25 mA)● Low voltage (max. 30 V).
APPLICATIONS
● RF stages in FM front-ends in common base configuration. PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
DESCRIPTION
PNP medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BF824 MARKING CODE(1) F8∗ Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. handbook, halfpage 3 1 Top view 1 2 MAM256 3 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BF824 NAME − PACKAGEDESCRIPTION
plastic surface mounted package; 3 leads VERSION SOT23 2004 Jan 16 2 NXP Semiconductors PNP medium frequency transistor Product data sheet BF824 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1.
