BGY282 Datasheet | NXP Semiconductors

FEATURES - Dual band GSM amplifier - 3.5 V nominal supply voltage - 33 d Bm output power for GSM1800 - 35 d Bm output power for GSM900 - Easy output power control by DC voltage - Internal input and output matching - Easy band selection by DC voltage - Suited for GPRS class 12 (duty cycle 4 : 8). APPLICATIONS - Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz. PINNING - SOT632A PIN 1 2 3, 6, 9, 12 4 5 7 8 10 11 VAPC Ground VS1 (GSM900) RF output 1 (GSM900) RF output 2 (GSM1800) VS2 (GSM1800) Vband RF input 2 (GSM1800) DESCRIPTION RF input 1 (GSM900) DESCRIPTION The BGY282 is a power amplifier module in a SOT632A surface mounted ceramic package with a plastic cap. The module consists of two separated line-ups, one for GSM900 and one for GSM1800 with internal power control, input and output matching. 11 Bottom view MBL253 Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; δ = 1 : 8 f (MHz) 880 to 915 1710 to 1785 VS (V) 3.5 3.5 VAPC (V) ≤2.2 ≤2.2 PL (d Bm) typ. 35 typ. 33 η (%) 50 45 ZS , ZL (Ω ) 50 50 2001 Dec 04 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS1, VS2 VAPC PD1, PD2 PL1 PL1 PL2 PL2 PS1 PS2 Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power 1 (GSM900) load power 1 (GSM900) load power 2 (GSM1800) load power 2 (GSM1800) total power from supply during pulse (GSM900) total power from supply during pulse (GSM1800) storage temperature operating mounting base temperature δ = 4 : 8; VSWRout > 2 : 1 δ=4:8 δ=4:8 δ = 4 : 8; VSWRout > 2 : 1 CONDITIONS VAPC = 0; RFIN = off VAPC > 0.5 V; RFIN = on MIN. - - - - - - - - - - -...