BGY284 Datasheet | NXP Semiconductors

FEATURES - Quad band GSM amplifier - Very small size (8 x 8 mm). - Suited for GPRS class 12 (duty cycle 4 : 8) - Integrated power control loop - 3.5 V nominal supply voltage - 35 d Bm controlled output power for GSM850/EGSM900 - 32.5 d Bm controlled output power for DCS1800/PCS1900 - Easy on/off and band select by digital control voltage - Internal input and output matching - Specification based on 3GPP TS 45.005. APPLICATIONS - Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in four frequency bands: 824 to 849 MHz, 880 to 915 MHz, 1710 to 1785 MHz and 1850 to 1910 MHz. DESCRIPTION The BGY284 is a power amplifier module in a SOT775 surface mounted package with a plastic cap. The module consists of two separated line-ups, one for low band (LB,GSM850/EGSM900) and one for high band (HB, DCS1800/PCS1900) with internal power detection function, power control loop, input and output matching. See the simplified internal circuit on page 4. The power control circuit ensures a stable power output set by the level of VDAC and stabilised to pensate variations of supply voltage, input power and temperature, with a control range fully pliant with ETSI time mask and power spectrum requirements QUICK REFERENCE DATA RF performance at Tmb = 25 °C (mounting base temperature); VBAT = 3.5 V; VSTAB = 2.8 V; ZS = ZL = 50 Ω; PD = 0 d Bm; δ = 2:8 MODE OF OPERATION f (MHz) 824 to 849 Typical pulsed, controlled output power 880 to 915 1710 to 1785 1850 to 1910 PL (d Bm) 34 34 31.3 31.3 η (%) 50 50 45 45 2003 Aug 20 Philips Semiconductors Preliminary specification power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 & PCS1900 PINNING - SOT775 SYMBOL GND VBAT VBAT RFin,HB VTXon VDAC VSTAB Vband PIN NUMBER 1, 13, 15 2, 3 11, 12 4 5 6 7 8 9 RFin,LB RFout,LB RFout,HB 10 14 16 inner pads input, analog output, analog output, analog ground PIN TYPE ground supply supply input, analog input, logic input, analog supply...