BGY288 Datasheet | NXP Semiconductors

description The BGY288 is a power amplifier module in a SOT775 surface mounted package with a plastic cap. In the module, a mix of state of the art technologies as In Ga P, Si-Bicmos and Si passive integration are used to bine high performance with a small size. The module prises two functional sections, one for low-band (GSM850/EGSM900) and one for high-band (DCS1800/PCS1900) with internal power detection, power control loop, input and output matching; see Figure 2. The power control circuit ensures a stable RF power output which is set by the voltage level on pin PC. The power control circuit is stabilized to pensate for variations in supply voltage, input power and temperature, and has a control range fully pliant with European Telemunication Standards Institute (ETSI) time mask and power spectrum requirements. 1.2 Features 1.2.1 General features s Quad band GSM amplifier s 34 d Bm controlled output power for GSM850/EGSM900 s Suited for GPRS class 12 (duty cycle δ = 4 : 8) s Integrated power control loop s 3.6 V nominal supply voltage s Very small size (8 mm × 8 mm) s 32.5 d Bm controlled output power for DCS1800/PCS1900 s Easy on/off and band select by digital control voltage s Internal input and output matching s Specification based on 3GPP TS 45.005 1.2.2 RF performance RF performance with a typical pulsed, controlled output power at Tmb = 25 °C; VBAT = 3.6 V; VSTAB = 2.8 V; ZS = ZL = 50 Ω; PD(LB) = 2 d Bm / PD(HB) = 0 d Bm; δ = 2 : 8. s f = 824 MHz to 849 MHz; η @ PSAT = 50 %; PL = 34 d Bm s f = 880 MHz to 915 MHz; η @ PSAT = 55 %; PL = 34 d Bm s f = 1710 MHz to 1785 MHz; η @ PSAT = 50 %; PL = 32.5 d Bm s f = 1850 MHz to 1910 MHz; η @ PSAT = 50 %; PL = 32.5 d Bm 1.3 Applications s Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in four frequency bands: 824 MHz to 849 MHz, 880 MHz to 915 MHz, 1710 MHz to 1785 MHz and 1850 MHz to 1910 MHz. .. Philips Semiconductors Power amplifier with integrated control loop 2....