Datasheet4U Logo Datasheet4U.com

BLF2045 - UHF power LDMOS transistor

General Description

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap.

The common source is connected to the mounting flange.

Fig.1 Simplified outline.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on underside eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Dec 06 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation. APPLICATIONS • Communication transmitter applications (PCN/PCS) in the 1.8 to 2.2 GHz frequency range. 3 BLF2045 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.