BLF2045 Description
1 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The mon source is connected to the mounting flange. 2 Top view MBK584 Fig.1 Simplified outline.
BLF2045 Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on underside eliminates DC isolators, reducing mon mode inductance
- Designed for broadband operation
BLF2045 Applications
- munication transmitter applications (PCN/PCS) in the 1.8 to 2.2 GHz frequency range
- SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION