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BLF2047 - UHF power LDMOS transistor

General Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap.

The common source is connected to the mounting flange.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on underside eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (1.8 to 2.2 GHz).
  • Internal input and output matching for high gain and efficiency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047 UHF power LDMOS transistor Product specification Supersedes data of 1999 Jul 01 1999 Dec 02 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.8 to 2.2 GHz). • Internal input and output matching for high gain and efficiency APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2200 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap.