BLF2047
FEATURES
- High power gain
- Easy power control
- Excellent ruggedness
- Source on underside eliminates DC isolators, reducing mon mode inductance
- Designed for broadband operation (1.8 to 2.2 GHz).
- Internal input and output matching for high gain and efficiency APPLICATIONS
- mon source class-AB operation for PCN and PCS applications in the 1800 to 2200 MHz frequency range. DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The mon source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2200; f2 = 2200.1 VDS (V) 26 28 CAUTION PL (W) 65 (PEP) 65 (PEP) Gp (d B) >10 typ. 12.6 ηD (%) >30
2 Top view 3 handbook, halfpage
PINNING PIN 1 2 3 drain gate source connected to flange DESCRIPTION
MBK394
Fig.1 Simplified outline SOT502A. dim (d Bc) ≤- 25 typ.
- 29 typ. 31
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