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BLF2047L - UHF power LDMOS transistor

General Description

1 APPLICATIONS

Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range.

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on underside eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (1.8 to 2 GHz).
  • Internal input and output matching for high gain and efficiency. handbook, halfpage BLF2047L.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047L UHF power LDMOS transistor Product specification Supersedes data of 1999 Apr 01 1999 Dec 06 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.8 to 2 GHz) • Internal input and output matching for high gain and efficiency. handbook, halfpage BLF2047L PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range.