BLF2047L
FEATURES
- High power gain
- Easy power control
- Excellent ruggedness
- Source on underside eliminates DC isolators, reducing mon mode inductance
- Designed for broadband operation (1.8 to 2 GHz)
- Internal input and output matching for high gain and efficiency. handbook, halfpage
PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
APPLICATIONS
- mon source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The mon source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 PL (W) 65 (PEP) Gp (d B) >10.5 ηD (%) >30 dim (d Bc) ≤- 25
Top view
MBK394
Fig.1 Simplified outline SOT502A.
LIMITING VALUES In accordance with the Absolute...
