| Part number | BLF4G10-120 |
|---|---|
| Datasheet | BLF4G10-120_PhilipsSemiconductors.pdf |
| File Size | 155.94 KB |
| Manufacturer | NXP Semiconductors |
| Description | UHF power LDMOS transistor |
|
|
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Typical performance RF performance at Th = 25 °C in a mon base class-AB test circuit. Therefore care should be taken during transport and handling.
See all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLF4G10LS-120 | UHF power LDMOS transistor |
| BLF4G10S-120 | UHF power LDMOS transistor |
| BLF4G20LS-110B | UHF power LDMOS transistor |
| BLF404 | UHF power MOS transistor |
| BLF0810-180 | Base station LDMOS transistors |
| BLF0810-90 | Base station LDMOS transistors |
| BLF0810S-180 | Base station LDMOS transistors |
| BLF0810S-90 | Base station LDMOS transistors |
| BLF1043 | UHF power LDMOS transistor |
| BLF1046 | UHF power LDMOS transistor |
