BLF4G20LS-110B Datasheet UHF power LDMOS transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product proﬁle 1.

Datasheet Details

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance f = 1930 MHz to 1990 MHz;

Tcase = 25 °C;

s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x Efﬁciency = 38.5 % (typ) x ACPR400 =.
61 dBc (typ) x ACPR600 =.
74 dBc (typ) x EVMrms = 2.1 % (typ) s Easy power control s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BLF4.

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