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BLF4G10LS-120 - UHF power LDMOS transistor

Datasheet Summary

Description

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values.

Features

  • s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 =.
  • 61 dBc (typ) x ACPR600 =.
  • 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (800 MHz to 1000 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semicon.

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Datasheet Details

Part number BLF4G10LS-120
Manufacturer NXP
File Size 140.80 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF4G10LS-120 Datasheet
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www.DataSheet4U.com BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values. Mode of operation CW GSM EDGE 2-tone [1] [2] VDS (V) 28 28 28 PL (W) 120 48 (AV) Gp ηD (dB) (%) 19 19 57 40 46 ACPR400 (dBc) −61 [1] - ACPR600 (dBc) −72 [2] - EVM (%) 1.5 - IMD3 (dBc) −31 120 (PEP) 19 ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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