BLF4G10LS-120 Overview
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Typical performance f = 920 MHz to 960 MHz; in a class-AB production test circuit;.
| Part number | BLF4G10LS-120 |
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| Datasheet | BLF4G10LS-120_PhilipsSemiconductors.pdf |
| File Size | 140.80 KB |
| Manufacturer | NXP Semiconductors |
| Description | UHF power LDMOS transistor |
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120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Typical performance f = 920 MHz to 960 MHz; in a class-AB production test circuit;.
See all NXP Semiconductors datasheets
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