BLF4G10LS-120 Datasheet UHF power LDMOS transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product proﬁle 1.

Datasheet Details

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1: Typical performance f = 920 MHz to 960 MHz;

Th = 25 °C;

s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efﬁciency = 40 % (typ) x ACPR400 =.
61 dBc (typ) x ACPR600 =.
72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (800 MHz to 1000 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semicon.

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