BLF4G10LS-120 Description
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Typical performance f = 920 MHz to 960 MHz; in a class-AB production test circuit;.
- Part: BLF4G10LS-120
- Manufacturer: NXP Semiconductors
- Size: 140.80 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BLF4G10-120 | UHF power LDMOS transistor |
| BLF4G10S-120 | UHF power LDMOS transistor |
| BLF4G20LS-110B | UHF power LDMOS transistor |
| BLF404 | UHF power MOS transistor |
| BLF0810-180 | Base station LDMOS transistors |