BLV99SL Description
NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz munications band. All leads are isolated from the mounting base.
BLV99SL Key Features
- Emitter-ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a
- SOT172D PIN 1 2 3 4 base collector emitter DESCRIPTION emitter WARNING Product and environmental safety
- toxic materials