BSN10 Overview
N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use in general purpose fast switching applications. PINNING - TO-92 ndbook, halfpage BSN10; BSN10A QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage MAX.
BSN10 Key Features
- Direct interface to C-MOS, TTL, etc
- High-speed switching
- No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended f