Datasheet4U Logo Datasheet4U.com

BSN20W - N-channel Transistor

Datasheet Summary

Description

N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

📥 Download Datasheet

Datasheet preview – BSN20W

Datasheet Details

Part number BSN20W
Manufacturer NXP
File Size 73.71 KB
Description N-channel Transistor
Datasheet download datasheet BSN20W Datasheet
Additional preview pages of the BSN20W datasheet.
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2000 Mar 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Thin and thick film circuits • General purpose fast switching applications. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon Ptot Note 1.
Published: |