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BSN20W - N-channel Transistor

General Description

N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2000 Mar 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Thin and thick film circuits • General purpose fast switching applications. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon Ptot Note 1.