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BSN10A - N-channel Transistors

General Description

N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use in general purpose fast switching applications.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSN10; BSN10A N-channel enhancement mode vertical D-MOS transistors Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use in general purpose fast switching applications. PINNING - TO-92 ndbook, halfpage BSN10; BSN10A QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage MAX. 50 175 15 1.