BUK6510-75C - N-channel TrenchMOS FET

Product Overview

NXP

Part number	BUK6510-75C
Manufacturer	NXP
File Size	228.38 KB
Description	N-channel TrenchMOS FET
Datasheet	BUK6510-75C Datasheet
Additional preview pages of the BUK6510-75C datasheet.

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

📁 Similar Datasheet

BUK6507-55C - N-Channel MOSFET (NXP Semiconductors)
BUK6507-75C - N-Channel MOSFET (NXP Semiconductors)
BUK653R2-55C - N-Channel MOSFET (NXP Semiconductors)
BUK653R3-30C - N-Channel MOSFET (NXP Semiconductors)
BUK653R4-40C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
BUK653R5-55C - N-Channel MOSFET (NXP Semiconductors)
BUK654R6-55C - N-Channel MOSFET (NXP Semiconductors)
BUK655-500B - N-Channel 600-V Power MOSFET (VBsemi)

Other Datasheets by NXP

BUK652R1-30C - N-channel TrenchMOS intermediate level FET
BUK652R3-40C - N-channel 40 V 2.3 m intermediate level Automotive TrenchMOS FET
BUK652R6-40C - N-channel TrenchMOS FET
BUK652R7-30C - N-channel TrenchMOS intermediate level FET
BUK654R0-75C - N-channel TrenchMOS FET
BUK654R8-40C - N-channel TrenchMOS intermediate level FET

Published: Aug 19, 2010 |