Datasheet Details
| Part number | BUK652R3-40C |
|---|---|
| Manufacturer | NXP |
| File Size | 259.38 KB |
| Description | N-channel 40 V 2.3 m intermediate level Automotive TrenchMOS FET |
| Datasheet |
 BUK652R3-40C Datasheet
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| Part number | BUK652R3-40C |
|---|---|
| Manufacturer | NXP |
| File Size | 259.38 KB |
| Description | N-channel 40 V 2.3 m intermediate level Automotive TrenchMOS FET |
| Datasheet |
BUK652R3-40C Datasheet
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Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.