BUK652R7-30C Datasheet | NXP Semiconductors

description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for intermediate level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V Automotive systems - Electric and electro-hydraulic power steering - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 14 [1] Min - Typ - Max Unit 30 100 204 V A W mΩ Static characteristics 2.72 3.2 .. NXP Semiconductors N-channel Trench MOS intermediate level FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 15; see Figure 16 Min Typ Max Unit 501 m J Table 1. Symbol EDS(AL)S Avalanche ruggedness Dynamic characteristics QGD 33.3 n C [1] Continuous current is limited by package. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78A (TO-220AB) 3. Ordering...