BUK652R1-30C Datasheet | NXP Semiconductors

description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for intermediate level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V Automotive systems - HVAC - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C Tmb = 25 °C; see Figure 1 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 3 ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [1] Min - Typ 1.8 Max Unit 30 100 262 2.1 V A W mΩ Static characteristics Avalanche ruggedness EDS(AL)S 1.7 J [1] Continuous current is limited by package. .. NXP Semiconductors N-channel Trench MOS intermediate level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate Drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK652R1-30C TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Objective data...