BUK652R1-30C datasheet by NXP Semiconductors.
| Part number | BUK652R1-30C |
|---|---|
| Datasheet | BUK652R1-30C_PhilipsSemiconductors.pdf |
| File Size | 149.92 KB |
| Manufacturer | NXP Semiconductors |
| Description | N-channel TrenchMOS intermediate level FET |
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Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
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