BUK7L11-34ARC Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™ technology, featuring very low on-state resistance, integral gate resistor, ESD protection diodes and clamping diodes to protect the MOSFET from avalanching. 1.2 Features s ESD and overvoltage protection s Internal gate resistor s Q101 pliant s On-state resistance 8 mΩ (typ). 1.3 Applications s 12 V loads s Motors, lamps and solenoids. 1.4 Quick reference data s VDSR(CL) = 41 V (typ) s ID ≤ 89 A s RDSon = 8 mΩ (typ) s Ptot ≤ 172 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78C, simplified outline and symbol Simplified outline mb Description gate (g) drain (d) source (s) mounting base, connected to drain (d) Symbol d g s MBL521 1 2 3 MBL370 SOT78C (TO-220) Data Sheet 4 U . .. Philips Semiconductors Trench PLUS standard level FET 3. Ordering information Table 2: Ordering information Package Name BUK7L11-34ARC TO-220 Description Version Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads. SOT78C Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot IDG(CL) IGS(CL) Tstg Tj IDR IDRM EDS(CL)S peak drain current total power dissipation drain-gate clamping current gate-source clamping current storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs [2] [3] Conditions [1] Min - 55 - 55 [1] [1] [2] [3] [2] Max 34 34 ±20 89 75 63 358 172 50 10 50 +175 +175 89 75 358 465 Unit V V V A A A A W m A m A m A °C °C A A A m J RGS = 20 kΩ Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 tp = 5 ms; δ = 0.01 continuous tp = 5 ms; δ = 0.01 Source-dra...