BUK7107-55AIE Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™ technology, featuring very low on-state resistance, Trench PLUS current sensing and diodes for ESD protection. Product availability: BUK7107-55AIE in SOT426 (D2-PAK) BUK7907-55AIE in SOT263B (TO-220AB). 1.2 Features s Integrated current sensor s ESD protection s Q101 pliant s Standard level patible. 1.3 Applications s Variable Valve Timing for engines s Electrical Power Assisted Steering. 1.4 Quick reference data s VDS ≤ 55 V s ID ≤ 140 A s RDSon = 5.8 mΩ (typ) s ID/Isense = 500 (typ). 2. Pinning information Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline mb mb Description gate (g) Isense drain (d) Kelvin source source (s) mounting base; connected to drain (d) Symbol d 1 2 3 4 5 g Front view MBK127 MBL368 Isense s Kelvin source MBL263 SOT426 (D2-PAK) SOT263B (TO-220AB) Philips Semiconductors BUK71/7907-55AIE Trench PLUS standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation gate-source clamping current storage temperature junction temperature reverse drain current peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 68 A; VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C [1] [2] [1] [2] [2] Conditions IDG = 250 µA Min - 55 - 55 - Max 55 55 ±20 140 75 75 560 272 10 50 +175 +175 140 75 560 460 Unit V V V A A A A W m A m A °C °C A A A m J Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 continuous tp = 5 ms; δ =...