BUK7105-40ATE Datasheet | NXP Semiconductors

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. The devices include Trench PLUS diodes for temperature sensing and Electro Static Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Allows responsive temperature monitoring due to integrated temperature sensor - Electrostatically robust due to integrated protection diodes - Low conduction losses due to low on-state resistance - Q101 pliant - Suitable for standard level gate drive sources 1.3 Applications - Electrical Power Assisted Steering (EPAS) - Variable Valve Timing for engines 1.4 Quick reference data Table 1. Quick reference Symbol Parameter VDS drain-source voltage Static characteristics Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RDSon drain-source on-state VGS = 10 V; ID = 50 A; resistance Tj = 25 °C; see Figure 7; see Figure 8 SF(TSD) temperature sense diode temperature coefficient IF = 250 µA; Tj ≥ -55 °C; Tj ≤ 175 °C VF(TSD) temperature sense diode forward voltage VF(TSD)hys temperature sense diode forward voltage hysteresis IF = 250 µA; Tj = 25 °C IF ≤ 250 µA; Tj = 25 °C; IF ≥ 125 µA Min Typ Max Unit - - 40 V - 4.5 5 mΩ -1.4 -1.54 -1.68 m V/K 648 658 668 m V 25 32 50 m V NXP Semiconductors N-channel Trench PLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2A anode 3D drain 4K cathode 5S source mb D mounting base; connected to drain 3. Ordering...