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BUK714R1-40BT - TrenchMOS standard level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

The devices include TrenchPLUS diodes for over-temperature protection.

Key Features

  • s Integrated temperature sensor s Very low on-state resistance s Q101 compliant s 175 °C rated. 1.3.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com BUK71/794R1-40BT TrenchMOS™ standard level FET Rev. 01 — 4 November 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices include TrenchPLUS diodes for over-temperature protection. Product availability: BUK714R1-40BT in SOT426 (D2-PAK) BUK794R1-40BT in SOT263B (TO-220AB). 1.2 Features s Integrated temperature sensor s Very low on-state resistance s Q101 compliant s 175 °C rated. 1.3 Applications s Electrical Power Assisted Steering s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s s RDSon = 3.4 mΩ (typ) VDS ≤ 40 V s ID ≤ 75 A s Ptot ≤ 272 W. 2.