BUK714R1-40BT Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) Trench MOS™ technology. The devices include Trench PLUS diodes for over-temperature protection. Product availability: BUK714R1-40BT in SOT426 (D2-PAK) BUK794R1-40BT in SOT263B (TO-220AB). 1.2 Features s Integrated temperature sensor s Very low on-state resistance s Q101 pliant s 175 °C rated. 1.3 Applications s Electrical Power Assisted Steering s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s s RDSon = 3.4 mΩ (typ) VDS ≤ 40 V s ID ≤ 75 A s Ptot ≤ 272 W. 2. Pinning information Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline mb mb Description gate (g) anode (a) drain (d) cathode (k) source (s) mounting base; connected to drain (d) Symbol d a g 1 2 3 4 5 03nm72 s k Front view MBK127 SOT426 (D2-PAK) MBL263 SOT263B (TO-220AB) Philips Semiconductors BUK71/794R1-40BT Trench MOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C Human Body Model; C = 100 p F; R = 1.5 kΩ [1] [2] [1] [2] [2] Conditions RGS = 20 kΩ Min - 55 - 55 - Max 40 40 ±20 187 75 75 748 272 +175 +175 187 75 748 1.5 Unit V V V A A A A W °C °C A A A J Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness EDS(AL)S...