BUK7108-40AIE Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™ technology, featuring very low on-state resistance, Trench PLUS current sensing and diodes for ESD protection. 1.2 Features s ESD protection s Integrated current sensor s Q101 pliant s Standard level patible. 1.3 Applications s Variable Valve Timing for engines s Electrical Power Assisted Steering. 1.4 Quick reference data s VDS ≤ 40 V s ID ≤ 117 A s RDSon = 6 mΩ (typ) s ID/Isense = 500 (typ). 2. Pinning information Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline mb mb Description gate (g) sense current (Isense) drain (d) Kelvin source source (s) mounting base; connected to drain (d) Symbol d 1 2 3 4 5 g Front view MBK127 MBL368 Isense s Kelvin source MBL263 SOT426 (D2-PAK) SOT263B (TO-220AB) Philips Semiconductors BUK71/7908-40AIE Trench PLUS standard level FET 3. Ordering information Table 2: Ordering information Package Name BUK7108-40AIE BUK7908-40AIE D2-PAK TO-220 Description Version Plastic single-ended surface mounted package; 5 leads (one lead cropped) SOT426 Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-leads SOT263B Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation gate-source clamping current storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C Human Body Model; C = 100 p F; R =...