BUK7107-40ATC Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™ technology, featuring very low on-state resistance, Trench PLUS diodes for clamping, (ESD) protection and temperature sensing. Product availability: BUK7107-40ATC in SOT426 (D2-PAK) BUK7907-40ATC in SOT263B (TO-220AB). 1.2 Features s Integrated temperature sensor s ESD and overvoltage protection s Q101 pliant s RDSon = 5.8 mΩ (typ). 1.3 Applications s Variable Valve Timing for engines s Electrical Power Assisted Steering. 1.4 Quick reference data s VDS ≤ 40 V s ID ≤ 75 A s VF = 658 m V (typ) s SF = - 1.54 m V/K (typ). 2. Pinning information Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline mb mb Description gate (g) anode (a) drain (d) cathode (k) source (s) mounting base; connected to drain (d) Symbol d a g 1 2 3 4 5 MBL306 s k Front view MBK127 MBL263 SOT426 (D2-PAK) SOT263B (TO-220AB) Philips Semiconductors BUK71/7907-40ATC Trench PLUS standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot IDG(CL) IGS(CL) peak drain current total power dissipation drain-gate clamping current gate-source clamping current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 tp = 5 ms; δ = 0.01 continuous tp = 5 ms; δ = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM Clamping EDS(CL)S non-repetitive drain-source clamping energy unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 10 kΩ; starting Tj = 25 °C Human Body Model; C = 100 p F; R = 1.5 kΩ 1.4 J storage temperature junction temperature reverse drain current peak reverse drain current Tmb = 25 °C Tmb = 25...