BUK9515-100A
BUK9515-100A is N-channel TrenchMOS logic level FET manufactured by NXP Semiconductors.
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- AEC Q101 pliant
- Low conduction losses due to low on-state resistance
1.3 Applications
- Automotive and general purpose power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics
RDSon drain-source on-state resistance
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche energy
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C
ID = 35 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 100 V
- - 75 A
- - 230 W
-55
- 175 °C
- 11.5 14.4 mΩ
- 12 15 mΩ
- - 120 m J
NXP Semiconductors
2. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information Symbol Description
G gate D drain S source D mounting base; connected to drain
N-channel Trench MOS logic level FET
Simplified outline mb
Graphic symbol
G mbb076 S
3. Ordering information
SOT78A (TO-220AB)
Table 3. Ordering...
