BUK95150-55A Datasheet | NXP Semiconductors

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. PINNING TO220AB & SOT404 PIN DESCRIPTION 1 gate 2 drain 3 source tab/mb drain QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 55 13 53 175 150 137 PIN CONFIGURATION mb tab SYMBOL d 2 13 SOT404 1 23 TO220AB g s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDGR ±VGS ±VGSM Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage RGS = 20 kΩ - tp≤50µS ID IDM Ptot Tstg, Tj Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25...