BY505 Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Soft-recovery switching characteristics - pact construction. APPLICATIONS - High-voltage applications for: - High frequencies - Switching applications. The cathode lead is marked by a black band. k handbook, halfpage BY505 expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of a MAM162 Fig.1 Simplified outline (SOD61A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VRW IF(AV) PARAMETER non-repetitive peak reverse voltage repetitive peak reverse voltage working reverse voltage average forward current averaged over any 20 ms period; Ttp = 25 °C; lead length = 10 mm; see Fig.2; see also Fig.4 averaged over any 20 ms period; Tamb = 60 °C; PCB mounting (see Fig.6); see Fig.3; see also Fig.4 IFRM IFSM repetitive peak forward current non-repetitive peak forward current t ≤ 10 ms; half sinewave; Tj = Tj max prior to surge; VR = VRWmax CONDITIONS MIN. - - - - MAX. 2200 2200 2000 85 V V V m A UNIT - 50 m A - - 800 5 m A A Tstg Tj storage temperature junction temperature - 65 - 65 +120 +120 °C °C 1996 Sep 26 Philips Semiconductors Product specification High-voltage soft-recovery rectifier ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR Qr PARAMETER forward voltage reverse current recovery charge CONDITIONS IF = 100 m A; Tj = Tj max; see Fig.5 VR = VRWmax; Tj = Tj max when switched from IF = 100 m A to VR ≥ 100 V and d IF/dt = - 200 m A/µs; see Fig.7 when switched from IF = 100 m A to VR ≥ 100 V and d IF/dt = - 200 m A/µs; see Fig.7 when switched from IF = 100 m A to VR ≥ 100 V and d IF/dt = - 200 m A/µs; see Fig.7 VR = 0 V; f = 1 MHz MIN. - - -...