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LXE15450X - NPN microwave power transistor

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Description

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.

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Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated common-emitter structure provides high emitter efficiency.
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching ensures a good stability and allows an easier design of c.

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Datasheet Details

Part number LXE15450X
Manufacturer NXP
File Size 90.36 KB
Description NPN microwave power transistor
Datasheet download datasheet LXE15450X Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures a good stability and allows an easier design of circuits.
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