LXE16350X Datasheet PDF - NXP NPN microwave power transistor Specs

LXE16350X - NPN microwave power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic package, with emitter connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer.

Features

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Gold metallization realizes very good stability of the characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

Datasheet Details

Part number	LXE16350X
Manufacturer	NXP
File Size	88.62 KB
Description	NPN microwave power transistor
Datasheet	LXE16350X Datasheet
Additional preview pages of the LXE16350X datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET LXE16350X NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product speciﬁcation NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

Published: Mar 30, 2005 |