Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
LXE16350X NPN microwave power transistor
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very good stability of the characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Internal input and output prematching ensures good stability and allows an...