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LXE18400X - NPN microwave power transistor

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.

Key Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D039 LXE18400X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.