Datasheet4U Logo Datasheet4U.com

LXE18300X - NPN microwave power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.

Features

  • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits.
  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistan.

📥 Download Datasheet

Datasheet preview – LXE18300X

Datasheet Details

Part number LXE18300X
Manufacturer NXP
File Size 51.06 KB
Description NPN microwave power transistor
Datasheet download datasheet LXE18300X Datasheet
Additional preview pages of the LXE18300X datasheet.

📁 Similar Datasheet

Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET LXE18300X NPN microwave power transistor Product specification Supersedes data of January 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits • Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance.
Published: |