LXE18300X Overview
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange. LXE18300X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
LXE18300X Key Features
- Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits
- Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very good stability of the characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance